منابع مشابه
Ion implantation and hyperfine interactions in metals
2014 A very simplified description of angular distribution hyperfine interaction techniques is given, with a view to presenting their applications in ion-implantation studies of metals. Some typical experiments are reviewed. The latter part of the paper is devoted to a discussion of radiation damage effects in hyperfine interaction studies after ion-implantation. REVUE DE PHYSIQUE APPLIQUÉE TOM...
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Plasma immersion ion implantation from a BF3 plasma into crystalline (100) silicon was performed using the PULSION plasma doping tool. Implanted boron profiles were measured with the SIMS method and simulated using models with different levels of sophistication. The physical implantation model is based on an analytical energy distribution for ions from the plasma and uses a Monte-Carlo simulati...
متن کاملA study of ion implantation into crystalline germanium
We report an experimental and simulation study for introducing dopant ions into (100) germanium in the energy range from 5 to 40 keV. The successful calibration of our Monte Carlo ion implantation simulator for amorphous and crystalline Ge targets is demonstrated by comparison of predicted boron profiles with SIMS data. The implantation profile in Ge is shallower than in Si for a given energy d...
متن کاملAblation plasma ion implantation experiments: Measurement of Fe implantation into Si
Experiments have been performed demonstrating the feasibility of direct implantation of laser-ablated metal ions into a substrate. Initial experiments implanted iron ions into silicon substrates at pulsed, bias voltages up to negative 10 kV. Implantation of Fe ions into Si was confirmed by cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy. The 7.6 nm depth of...
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ژورنال
عنوان ژورنال: Journal of the Metal Finishing Society of Japan
سال: 1988
ISSN: 1884-3395,0026-0614
DOI: 10.4139/sfj1950.39.563